Wide Bandgap Semiconductor Power Devices

Book Wide Bandgap Semiconductor Power Devices Cover

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  • Publisher : Woodhead Publishing
  • Release : 17 October 2018
  • ISBN : 9780081023075
  • Page : 418 pages
  • Rating : 4.5/5 from 103 voters

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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

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Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
  • Author : B. Jayant Baliga
  • Publisher : Woodhead Publishing
  • Release Date : 2018-10-17
  • ISBN : 9780081023075
GET THIS BOOKWide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field.

Wide Bandgap Semiconductors for Power Electronics

Wide Bandgap Semiconductors for Power Electronics
  • Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
  • Publisher : John Wiley & Sons
  • Release Date : 2021-11-22
  • ISBN : 9783527346714
GET THIS BOOKWide Bandgap Semiconductors for Power Electronics

A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage to the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information

Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging
  • Author : Katsuaki Suganuma
  • Publisher : Woodhead Publishing
  • Release Date : 2018-05-28
  • ISBN : 9780081020951
GET THIS BOOKWide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power

Wide Bandgap Semiconductors

Wide Bandgap Semiconductors
  • Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
  • Publisher : Springer Science & Business Media
  • Release Date : 2007-04-12
  • ISBN : 9783540472353
GET THIS BOOKWide Bandgap Semiconductors

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Characterization of Wide Bandgap Power Semiconductor Devices

Characterization of Wide Bandgap Power Semiconductor Devices
  • Author : Fei Wang,Zheyu Zhang,Edward A. Jones
  • Publisher : Institution of Engineering and Technology
  • Release Date : 2018
  • ISBN : 9781785614910
GET THIS BOOKCharacterization of Wide Bandgap Power Semiconductor Devices

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap

Ultra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductor Materials
  • Author : Meiyong Liao,Bo Shen,Zhanguo Wang
  • Publisher : Elsevier
  • Release Date : 2019-06-18
  • ISBN : 9780128172568
GET THIS BOOKUltra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book

Wide Energy Bandgap Electronic Devices

Wide Energy Bandgap Electronic Devices
  • Author : Fan Ren,J. C. Zolper
  • Publisher : World Scientific
  • Release Date : 2003
  • ISBN : 9789812382467
GET THIS BOOKWide Energy Bandgap Electronic Devices

Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
  • Author : Yogesh Kumar Sharma
  • Publisher : BoD – Books on Demand
  • Release Date : 2018-09-12
  • ISBN : 9781789236682
GET THIS BOOKDisruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have

Wide Bandgap Semiconductor-Based Electronics

Wide Bandgap Semiconductor-Based Electronics
  • Author : Fan Ren,Stephen J Pearton
  • Publisher : Myprint
  • Release Date : 2020-10-08
  • ISBN : 0750325178
GET THIS BOOKWide Bandgap Semiconductor-Based Electronics

This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers provide reviews on the latest development of materials and devices in these systems.

Silicon Carbide Power Devices

Silicon Carbide Power Devices
  • Author : B Jayant Baliga
  • Publisher : World Scientific
  • Release Date : 2006-01-05
  • ISBN : 9789814478946
GET THIS BOOKSilicon Carbide Power Devices

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.

Gallium Nitride Power Devices

Gallium Nitride Power Devices
  • Author : Hongyu Yu,Tianli Duan
  • Publisher : CRC Press
  • Release Date : 2017-07-06
  • ISBN : 9781351767613
GET THIS BOOKGallium Nitride Power Devices

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure

Vertical GaN and SiC Power Devices

Vertical GaN and SiC Power Devices
  • Author : Kazuhiro Mochizuki
  • Publisher : Artech House
  • Release Date : 2018-04-30
  • ISBN : 9781630814298
GET THIS BOOKVertical GaN and SiC Power Devices

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are

Gallium Nitride and Silicon Carbide Power Devices

Gallium Nitride and Silicon Carbide Power Devices
  • Author : B Jayant Baliga
  • Publisher : World Scientific Publishing Company
  • Release Date : 2016-12-12
  • ISBN : 9789813109421
GET THIS BOOKGallium Nitride and Silicon Carbide Power Devices

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and

Topics in Growth and Device Processing of III-V Semiconductors

Topics in Growth and Device Processing of III-V Semiconductors
  • Author : S. J. Pearton,C. R. Abernathy,F. Ren
  • Publisher : World Scientific
  • Release Date : 1996
  • ISBN : 9810218842
GET THIS BOOKTopics in Growth and Device Processing of III-V Semiconductors

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Gallium Nitride and Related Wide Bandgap Materials and Devices

Gallium Nitride and Related Wide Bandgap Materials and Devices
  • Author : R. Szweda
  • Publisher : Elsevier
  • Release Date : 2000-07-07
  • ISBN : 0080532306
GET THIS BOOKGallium Nitride and Related Wide Bandgap Materials and Devices

The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.